vishay siliconix SIP2100 new product document number: 63949 s12-2801-rev. b, 10-dec-12 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: powerictechsupport@vishay.com 5 v, 1 a h-bridge motor driver description the SIP2100 is an integrated, buffered h-bridge with ttl and cmos compatible inputs with the capability of delivering up to 1 a continuous current at 5 v v dd supply. the SIP2100 has two independent logic inputs that can set four different motor operation modes: normal rotation, reverse rotation, stop (idling) and braking. the internal shoot-through protection logic also prevents upper and lower outputs from being turned on simultaneously. the SIP2100 offers high efficiency with an extremely low operating current. the device also benefits from over temperature protection with a s hut down hysteresis of 20 c. the SIP2100 is available in soic8 package. features ? 1 a drive capability ? optimized for 5 v v dd bias ? extremely low idle current ? shoot-through protection scheme ? thermal shutdown ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? high performance servo ? optical/tape disk drives ? brush/stepper motor driver package outline functional block diagram and truth table fig. 1 - package and pinout fig. 2 - functional block diagram truth table in a in b out a out b 1010 0101 0000 11hizhiz 1 2 3 4 8 7 6 5 s a s b gnd vdd out a out b in a in b soic (top view)
www.vishay.com 2 document number: 63949 s12-2801-rev. b, 10-dec-12 vishay siliconix SIP2100 new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: powerictechsupport@vishay.com stresses beyond those listed u nder ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condi tions beyond those indicated in the operational sections of t he specifications is not implied. exposure to absolute maximum rating/condi tions for extended periods may affect device reliability. absolute maximum ratings (t a = 25 c, unless otherwise noted) electrical parameter conditions limits unit v dd reference to gnd - 0.3 to 6 v out a , out b reference to gnd - 0.3 to 6 s a , s b reference to gnd - 0.3 to 1 in a , in b reference to gnd - 0.3 to v dd temperature operating temperature - 40 to 85 c max. operating junction temperature 150 recommended operating conditions parameter min. typ. max. unit v dd 3.855.5v temperature operating junction temperature 0 125 c recommended ambient temperature 0 70 thermal resistance ratings parameter max. unit thermal resistance (junction to ambient) so-8, r thja 153 c/w so-8 powerpad, r thjc 40 power dissipation so-8, t a = 70 c 522 mw so-8 powerpad, t a = 70 c 2 w junction temperature - 65 to 150 c storage temperature - 55 to 150
document number: 63949 s12-2801-rev. b, 10-dec-12 www.vishay.com 3 vishay siliconix SIP2100 new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: powerictechsupport@vishay.com notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not subject to production testing. specifications (t a = 25 c, unless otherwise specified) parameter symbol test conditions v dd = 5 v limits unit min. a typ. b max. a driver power supply v dd bias supply current i dd in = 100 khz 250 300 a in = 20 khz 150 180 quiescent state 50 v dd rising threshold v dd th_r v dd rising 2.8 3 v v dd falling threshold v dd th_f v dd falling 22.5 v dd uvlo hysteresis v dd uvlo 300 mv input logic input voltage high vin h 2 v input voltage low vin l 0.7 input sourcing current i inh 1 a input sinking current i inl - 1 output stage output voltage high v outh i out = - 500 ma v dd = 4.75 v 4.4 v i out = - 1000 ma 4.25 output voltage low v outl i out = + 500 ma 0.25 i out = + 1000 ma 0.5 output high propagation delay tp lh 20 25 ns output low propagation delay tp hl 20 25 thermal protection thermal shutdown threshold 150 c thermal shutdown hysteresis 20 pin description (soic package) pin number name function 1s a driver output return a 2 gnd analog ground of internal logic 3v dd input of internal logic bias and power stage 4s b driver output return b 5 out b driver output b 6 in b driver input b 7 in a driver input a 8 out a driver output a
www.vishay.com 4 document number: 63949 s12-2801-rev. b, 10-dec-12 vishay siliconix SIP2100 new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: powerictechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) fig 1. output voltage vs. temperature (at 1.5 a load) fig 3. quiescent current vs. temperature fig 5. r out vs. temperature 3 3.5 4 4.5 5 - 20 - 40 - 60 20 04060 temperature (c) 100 80 v out - output voltage (v) v in = 3.8 v v in = 5.5 v 25 30 35 40 45 50 current (a) - 20 - 40 - 60 20 04060 temperature (c) 100 80 v dd = 3.8 v v dd = 5.5 v 0.1 0.15 0.2 0.25 0.3 0.35 r out ( ) - 20 - 40 - 60 20 04060 temperature (c) 100 80 v in = 3.8 v v in = 5.5 v fig 2. supply current i dd vs. temperature fig 4. propagation delay vs. temperature fig 6. pwm rising threshold vs. temperature 0 50 100 150 200 250 300 i dd - supply current (a) - 20 - 40 - 60 20 04060 temperature (c) 100 80 v dd = 5.5 v,100 khz v dd = 3.8 v,100 khz v dd = 5.5 v, 20 khz v dd = 5.5 v,10 khz v dd = 3.8 v,10 khz v dd = 3.8 v, 20 khz 9 10 11 12 13 14 15 16 17 18 19 delay time (ns) - 20 - 40 - 60 20 04060 temperature (c) 100 80 tplh, v dd = 3.8 v tplh, v dd = 5.5 v tphl, v dd = 3.8 v tphl, v dd = 5.5 v 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 v ih (v) - 20 - 40 - 60 20 04060 temperature (c) 100 80 v dd = 5.5 v v dd = 5 v v dd = 3.8 v
document number: 63949 s12-2801-rev. b, 10-dec-12 www.vishay.com 5 vishay siliconix SIP2100 new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: powerictechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63949 . fig 7. pwm falling threshold vs. temperature 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 v il (v) - 20 - 40 - 60 20 04060 temperature (c) 100 80 v dd = 5.5 v v dd = 5 v v dd = 3.8 v
vishay siliconix package information document number: 71192 11-sep-06 www.vishay.com 1 dim millimeters inches min max min max a 1.35 1.75 0.053 0.069 a 1 0.10 0.20 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0808 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all le a d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (g a ge pl a ne) s oic (narrow): 8-lead jedec p a rt n u m b er: m s -012 s
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